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Lloyd Massengill
Lloyd Massengill
Verified email at vanderbilt.edu
Title
Cited by
Cited by
Year
Basic mechanisms and modeling of single-event upset in digital microelectronics
PE Dodd, LW Massengill
IEEE Transactions on nuclear Science 50 (3), 583-602, 2003
14612003
Charge collection and charge sharing in a 130 nm CMOS technology
OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ...
IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006
4862006
Single event transients in digital CMOS—A review
V Ferlet-Cavrois, LW Massengill, P Gouker
IEEE Transactions on Nuclear Science 60 (3), 1767-1790, 2013
4302013
Monte Carlo simulation of single event effects
RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ...
IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010
2862010
Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies
B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ...
IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007
2282007
Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design
BD Olson, DR Ball, KM Warren, LW Massengill, NF Haddad, SE Doyle, ...
IEEE transactions on nuclear science 52 (6), 2132-2136, 2005
2082005
Impact of scaling on soft-error rates in commercial microprocessors
N Seifert, X Zhu, LW Massengill
IEEE Transactions on Nuclear Science 49 (6), 3100-3106, 2002
2022002
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ...
IEEE transactions on nuclear science 52 (6), 2125-2131, 2005
1992005
A bias-dependent single-event compact model implemented into BSIM4 and a 90 nm CMOS process design kit
JS Kauppila, AL Sternberg, ML Alles, AM Francis, J Holmes, OA Amusan, ...
IEEE Transactions on nuclear Science 56 (6), 3152-3157, 2009
1982009
Single-event transient pulse quenching in advanced CMOS logic circuits
JR Ahlbin, LW Massengill, BL Bhuva, B Narasimham, MJ Gadlage, ...
IEEE Transactions on Nuclear Science 56 (6), 3050-3056, 2009
1982009
Comparison of combinational and sequential error rates for a deep submicron process
NN Mahatme, S Jagannathan, TD Loveless, LW Massengill, BL Bhuva, ...
IEEE Transactions on Nuclear Science 58 (6), 2719-2725, 2011
1842011
SEU modeling and prediction techniques
LW Massengill
IEEE NSREC Short Course 3, 1-93, 1993
1821993
Neutron-and proton-induced single event upsets for D-and DICE-flip/flop designs at a 40 nm technology node
TD Loveless, S Jagannathan, T Reece, J Chetia, BL Bhuva, MW McCurdy, ...
IEEE Transactions on Nuclear Science 58 (3), 1008-1014, 2011
1752011
Models and algorithmic limits for an ECC-based approach to hardening sub-100-nm SRAMs
MA Bajura, Y Boulghassoul, R Naseer, S DasGupta, AF Witulski, ...
IEEE Transactions on Nuclear Science 54 (4), 935-945, 2007
1742007
RHBD techniques for mitigating effects of single-event hits using guard-gates
A Balasubramanian, BL Bhuva, JD Black, LW Massengill
IEEE Transactions on Nuclear Science 52 (6), 2531-2535, 2005
1742005
On-chip characterization of single-event transient pulsewidths
B Narasimham, V Ramachandran, BL Bhuva, RD Schrimpf, AF Witulski, ...
IEEE Transactions on Device and Materials Reliability 6 (4), 542-549, 2006
1732006
A hardened-by-design technique for RF digital phase-locked loops
TD Loveless, LW Massengill, BL Bhuva, WT Holman, AF Witulski, ...
IEEE transactions on nuclear science 53 (6), 3432-3438, 2006
1432006
Single event upsets in deep-submicrometer technologies due to charge sharing
OA Amusan, LW Massengill, MP Baze, AL Sternberg, AF Witulski, ...
IEEE Transactions on Device and Materials Reliability 8 (3), 582-589, 2008
1412008
Impact of ion energy and species on single event effects analysis
RA Reed, RA Weller, MH Mendenhall, JM Lauenstein, KM Warren, ...
IEEE Transactions on Nuclear Science 54 (6), 2312-2321, 2007
1412007
Three-dimensional mapping of single-event effects using two photon absorption
D McMorrow, WT Lotshaw, JS Melinger, S Buchner, Y Boulghassoul, ...
IEEE Transactions on Nuclear Science 50 (6), 2199-2207, 2003
1382003
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