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Chew Beng Soh
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Assignment of deep levels causing yellow luminescence in GaN
CB Soh, SJ Chua, HF Lim, DZ Chi, S Tripathy, W Liu
Journal of applied physics 96 (3), 1341-1347, 2004
1322004
Identification of deep levels in GaN associated with dislocations
CB Soh, SJ Chua, HF Lim, DZ Chi, W Liu, S Tripathy
Journal of Physics: Condensed Matter 16 (34), 6305, 2004
1012004
Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
H Hartono, CB Soh, SY Chow, SJ Chua, EA Fitzgerald
Applied physics letters 90 (17), 2007
712007
Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructures
CB Soh, W Liu, JH Teng, SY Chow, SS Ang, SJ Chua
Applied Physics Letters 92 (26), 2008
552008
Nanopore morphology in porous GaN template and its effect on the LEDs emission
CB Soh, CB Tay, RJN Tan, AP Vajpeyi, IP Seetoh, KK Ansah-Antwi, ...
Journal of Physics D: Applied Physics 46 (36), 365102, 2013
502013
Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth
CB Soh, H Hartono, SY Chow, SJ Chua, EA Fitzgerald
Applied physics letters 90 (5), 2007
422007
Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire
AM Yong, CB Soh, XH Zhang, SY Chow, SJ Chua
Thin Solid Films 515 (10), 4496-4500, 2007
412007
Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
SJ Chua, H Hartono, CB Soh
US Patent App. 11/823,756, 2009
352009
Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence
IP Seetoh, CB Soh, EA Fitzgerald, SJ Chua
Applied Physics Letters 102 (10), 2013
342013
Enhanced luminescence efficiency due to carrier localization in InGaN∕ GaN heterostructures grown on nanoporous GaN templates
CB Soh, SY Chow, LY Tan, H Hartono, W Liu, SJ Chua
Applied Physics Letters 93 (17), 2008
332008
PMU placement for measurement redundancy distribution considering zero injection bus and contingencies
X Chen, F Wei, S Cao, CB Soh, KJ Tseng
IEEE Systems Journal 14 (4), 5396-5406, 2020
322020
High quality GaN grown from a nanoporous GaN template
H Hartono, CB Soh, SJ Chua, EA Fitzgerald
Journal of the Electrochemical society 154 (12), H1004, 2007
312007
Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs
CB Soh, CB Tay, SJ Chua, HQ Le, NSS Ang, JH Teng
Journal of crystal growth 312 (11), 1848-1854, 2010
302010
Influence of composition pulling effect on the two-dimensional electron gas formed at AlyInxGa1− x− yN∕ GaN interface
CB Soh, SJ Chua, S Tripathy, SY Chow, DZ Chi, W Liu
Journal of applied physics 98 (10), 2005
282005
Fabrication of phosphor free red and white nitride-based LEDs
CB Soh, SJ Chua, W Liu, JH Teng
US Patent 8,436,334, 2013
272013
Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes
K Dai, CB Soh, SJ Chua, L Wang, D Huang
Journal of Applied Physics 109 (8), 2011
272011
Development of (Zr,Mn) doped X-type hexaferrites for high frequency EMI shielding applications
HK Ye, SR Shannigrahi, CB Soh, SLW Yang, LS Li, DVM Repka, P Kumar
Journal of Magnetism and Magnetic Materials 465, 716-726, 2018
262018
Quantum dots excited InGaN/GaN phosphor‐free white LEDs
SJ Chua, CB Soh, W Liu, JH Teng, SS Ang, SL Teo
physica status solidi c 5 (6), 2189-2191, 2008
232008
Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
W Liu, CB Soh, P Chen, SJ Chua
Journal of crystal growth 268 (3-4), 509-514, 2004
232004
The influence of V defects on luminescence properties of AlInGaN quaternary alloys
CB Soh, SJ Chua, S Tripathy, W Liu, DZ Chi
Journal of Physics: Condensed Matter 17 (4), 729, 2005
222005
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Articles 1–20