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Shaban A. A. Mahmoud
Shaban A. A. Mahmoud
Associate Professor at Department of Electrical Engineering, Qassim University;Aswan University,
Verified email at qu.edu.sa
Title
Cited by
Cited by
Year
Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature
M Shaban, K Nomoto, S Izumi, T Yoshitake
Applied Physics Letters 94 (22), 2009
802009
Photovoltaic properties of n-type β-FeSi2/p-type Si heterojunctions
M Shaban, K Nakashima, W Yokoyama, T Yoshitake
Japanese Journal of Applied Physics 46 (7L), L667, 2007
652007
Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures
S Izumi, M Shaban, N Promros, K Nomoto, T Yoshitake
Applied Physics Letters 102 (3), 2013
552013
n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature
M Shaban, S Izumi, K Nomoto, T Yoshitake
Applied Physics Letters 95 (16), 2009
492009
Electrical and photovoltaic properties of n-type nanocrystalline-FeSi2/p-type Si heterojunctions prepared by facing-targets direct-current sputtering at room temperature
M Shaban, H Kondo, K Nakashima, T Yoshitake
Japanese journal of applied physics 47 (7R), 5420, 2008
482008
Electrical characteristics of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition
A Zkria, H Gima, M Shaban, T Yoshitake
Applied Physics Express 8 (9), 095101, 2015
362015
n-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunction photodiodes fabricated by facing-target direct-current sputtering
N Promros, K Yamashita, C Li, K Kawai, M Shaban, T Okajima, ...
Japanese journal of applied physics 51 (2R), 021301, 2012
282012
Near-infrared photodetection of n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions at low temperatures
N Promros, K Yamashita, S Izumi, R Iwasaki, M Shaban, T Yoshitake
Japanese journal of applied physics 51 (9S2), 09MF02, 2012
252012
Low-temperature annealing of n-type β-FeSi2/p-type Si heterojunctions
M Shaban, K Nomoto, K Nakashima, T Yoshitake
Japanese journal of applied physics 47 (5R), 3444, 2008
252008
Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering
M Shaban, K Nakashima, T Yoshitake
Japanese Journal of Applied Physics 46 (12R), 7708, 2007
242007
Heterojunction diodes comprising p-type ultrananocrystalline diamond films prepared by coaxial arc plasma deposition and n-type silicon substrates
Y Katamune, S Ohmagari, S Al-Riyami, S Takagi, M Shaban, T Yoshitake
Japanese journal of applied physics 52 (6R), 065801, 2013
232013
n-Type Nanocrystalline- /p-Type Si Heterojunction Photodiodes Prepared at Room Temperature
M Shaban, K Kawai, N Promros, T Yoshitake
IEEE electron device letters 31 (12), 1428-1430, 2010
212010
Epitaxial growth of β-FeSi2 thin films on Si (111) substrates by radio frequency magnetron sputtering and their application to near-infrared photodetection
N Promros, R Baba, M Takahara, TM Mostafa, P Sittimart, M Shaban, ...
Japanese Journal of Applied Physics 55 (6S2), 06HC03, 2016
192016
Fabrication of mesa structural n‐type nanocrystalline‐FeSi2/p‐type Si heterojunction photodiodes by liftoff technique combined with photolithography
S Funasaki, N Promros, R Iwasaki, M Takahara, M Shaban, T Yoshitake
physica status solidi (c) 10 (12), 1785-1788, 2013
152013
Characterization and design optimization of heterojunction photodiodes comprising n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite and p-type Si
M Shaban, A Zkria, T Yoshitake
Materials Science in Semiconductor Processing 86, 115-121, 2018
132018
Influence of ECAP parameters on the structural, electrochemical and mechanical behavior of ZK30: a combination of experimental and machine learning approaches
M Shaban, AI Alateyah, MF Alsharekh, MO Alawad, A BaQais, M Kamel, ...
Journal of Manufacturing and Materials Processing 7 (2), 52, 2023
122023
Current transport mechanisms in n-type ultrananocrystalline diamond/p-type Si heterojunctions
A Zkria, M Shaban, T Hanada, N Promros, T Yoshitake
Journal of nanoscience and nanotechnology 16 (12), 12749-12753, 2016
112016
Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions
M Shaban, AM Bayoumi, D Farouk, MB Saleh, T Yoshitake
Solid-State Electronics 123, 111-118, 2016
112016
Impedance spectroscopy analysis of n-type (nitrogen-doped) ultrananocrystalline diamond/p-type Si heterojunction diodes
A Zkria, M Shaban, E Abubakr, T Yoshitake
Physica Scripta 95 (9), 095803, 2020
102020
Design of a partially grid-connected photovoltaic microgrid using IoT technology
M Shaban, I Ben Dhaou, MF Alsharekh, M Abdel-Akher
Applied Sciences 11 (24), 11651, 2021
92021
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