| Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature M Shaban, K Nomoto, S Izumi, T Yoshitake Applied Physics Letters 94 (22), 2009 | 77 | 2009 |
| Photovoltaic properties of n-type β-FeSi2/p-type Si heterojunctions M Shaban, K Nakashima, W Yokoyama, T Yoshitake Japanese Journal of Applied Physics 46 (7L), L667, 2007 | 64 | 2007 |
| Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures S Izumi, M Shaban, N Promros, K Nomoto, T Yoshitake Applied Physics Letters 102 (3), 2013 | 54 | 2013 |
| SARS-CoV-2 vaccination modelling for safe surgery to save lives: data from an international prospective cohort study GS Collaborative, COVIDSurg Collaborative The British journal of surgery 108 (9), 1056, 2021 | 51 | 2021 |
| Electrical and photovoltaic properties of n-type nanocrystalline-FeSi2/p-type Si heterojunctions prepared by facing-targets direct-current sputtering at room temperature M Shaban, H Kondo, K Nakashima, T Yoshitake Japanese journal of applied physics 47 (7R), 5420, 2008 | 48 | 2008 |
| n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature M Shaban, S Izumi, K Nomoto, T Yoshitake Applied Physics Letters 95 (16), 2009 | 47 | 2009 |
| Electrical characteristics of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition A Zkria, H Gima, M Shaban, T Yoshitake Applied Physics Express 8 (9), 095101, 2015 | 35 | 2015 |
| n-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunction photodiodes fabricated by facing-target direct-current sputtering N Promros, K Yamashita, C Li, K Kawai, M Shaban, T Okajima, ... Japanese journal of applied physics 51 (2R), 021301, 2012 | 28 | 2012 |
| Near-infrared photodetection of n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions at low temperatures N Promros, K Yamashita, S Izumi, R Iwasaki, M Shaban, T Yoshitake Japanese journal of applied physics 51 (9S2), 09MF02, 2012 | 25 | 2012 |
| Low-temperature annealing of n-type β-FeSi2/p-type Si heterojunctions M Shaban, K Nomoto, K Nakashima, T Yoshitake Japanese journal of applied physics 47 (5R), 3444, 2008 | 24 | 2008 |
| Heterojunction diodes comprising p-type ultrananocrystalline diamond films prepared by coaxial arc plasma deposition and n-type silicon substrates Y Katamune, S Ohmagari, S Al-Riyami, S Takagi, M Shaban, T Yoshitake Japanese journal of applied physics 52 (6R), 065801, 2013 | 23 | 2013 |
| Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering M Shaban, K Nakashima, T Yoshitake Japanese Journal of Applied Physics 46 (12R), 7708, 2007 | 23 | 2007 |
| n-Type Nanocrystalline- /p-Type Si Heterojunction Photodiodes Prepared at Room Temperature M Shaban, K Kawai, N Promros, T Yoshitake IEEE electron device letters 31 (12), 1428-1430, 2010 | 21 | 2010 |
| Epitaxial growth of β-FeSi2 thin films on Si (111) substrates by radio frequency magnetron sputtering and their application to near-infrared photodetection N Promros, R Baba, M Takahara, TM Mostafa, P Sittimart, M Shaban, ... Japanese Journal of Applied Physics 55 (6S2), 06HC03, 2016 | 18 | 2016 |
| Fabrication of mesa structural n‐type nanocrystalline‐FeSi2/p‐type Si heterojunction photodiodes by liftoff technique combined with photolithography S Funasaki, N Promros, R Iwasaki, M Takahara, M Shaban, T Yoshitake physica status solidi (c) 10 (12), 1785-1788, 2013 | 15 | 2013 |
| Characterization and design optimization of heterojunction photodiodes comprising n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite and p-type Si M Shaban, A Zkria, T Yoshitake Materials Science in Semiconductor Processing 86, 115-121, 2018 | 13 | 2018 |
| Current transport mechanisms in n-type ultrananocrystalline diamond/p-type Si heterojunctions A Zkria, M Shaban, T Hanada, N Promros, T Yoshitake Journal of nanoscience and nanotechnology 16 (12), 12749-12753, 2016 | 11 | 2016 |
| Influence of ECAP parameters on the structural, electrochemical and mechanical behavior of ZK30: a combination of experimental and machine learning approaches M Shaban, AI Alateyah, MF Alsharekh, MO Alawad, A BaQais, M Kamel, ... Journal of Manufacturing and Materials Processing 7 (2), 52, 2023 | 10 | 2023 |
| Impedance spectroscopy analysis of n-type (nitrogen-doped) ultrananocrystalline diamond/p-type Si heterojunction diodes A Zkria, M Shaban, E Abubakr, T Yoshitake Physica Scripta 95 (9), 095803, 2020 | 10 | 2020 |
| Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions M Shaban, AM Bayoumi, D Farouk, MB Saleh, T Yoshitake Solid-State Electronics 123, 111-118, 2016 | 10 | 2016 |
Keita NomotoThe University of SydneyVerified email at sydney.edu.au
