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I. Pintilie
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Radiation hard silicon detectors—Developments by the RD48 (ROSE) collaboration
G Lindström, M Ahmed, S Albergo, P Allport, D Anderson, L Andricek, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2001
5742001
Iodine migration and degradation of perovskite solar cells enhanced by metallic electrodes
C Besleaga, LE Abramiuc, V Stancu, AG Tomulescu, M Sima, L Trinca, ...
The journal of physical chemistry letters 7 (24), 5168-5175, 2016
2692016
Radiation-induced point-and cluster-related defects with strong impact on damage properties of silicon detectors
I Pintilie, G Lindstroem, A Junkes, E Fretwurst
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2009
1562009
Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) collaboration
G Lindström, M Ahmed, S Albergo, P Allport, D Anderson, L Andricek, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2001
1522001
Formation of the deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation
I Pintilie, L Pintilie, K Irmscher, B Thomas
Applied physics letters 81 (25), 4841-4843, 2002
1132002
Normal and inverted hysteresis in perovskite solar cells
GA Nemnes, C Besleaga, V Stancu, DE Dogaru, LN Leonat, L Pintilie, ...
The Journal of Physical Chemistry C 121 (21), 11207-11214, 2017
882017
Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
I Pintilie, E Fretwurst, G Lindström, J Stahl
Applied physics letters 82 (13), 2169-2171, 2003
852003
Polarization-control of the potential barrier at the electrode interfaces in epitaxial ferroelectric thin films
I Pintilie, CM Teodorescu, C Ghica, C Chirila, AG Boni, L Hrib, I Pasuk, ...
ACS Applied Materials & Interfaces 6 (4), 2929-2939, 2014
802014
Ferroelectric Schottky diode behavior from a structure
L Pintilie, V Stancu, L Trupina, I Pintilie
Physical Review B—Condensed Matter and Materials Physics 82 (8), 085319, 2010
792010
The influence of Cu doping on opto-electronic properties of chemically deposited CdS
D Petre, I Pintilie, E Pentia, T Botila
Materials Science and Engineering: B 58 (3), 238-243, 1999
761999
Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy
R Radu, I Pintilie, LC Nistor, E Fretwurst, G Lindstroem, LF Makarenko
Journal of Applied Physics 117 (16), 2015
722015
Superior radiation tolerance of thin epitaxial silicon detectors
G Kramberger, D Contarato, E Fretwurst, F Hönniger, G Lindström, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2003
722003
Cluster related hole traps with enhanced-field-emission—the source for long term annealing in hadron irradiated Si diodes
I Pintilie, E Fretwurst, G Lindström
Applied Physics Letters 92 (2), 2008
682008
Close to midgap trapping level in Co60 gamma irradiated silicon detectors
I Pintilie, E Fretwurst, G Lindström, J Stahl
Applied physics letters 81 (1), 165-167, 2002
672002
Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL
J Zhang, E Fretwurst, R Klanner, I Pintilie, J Schwandt, M Turcato
Journal of instrumentation 7 (12), C12012, 2012
662012
Radiation-hard semiconductor detectors for SuperLHC
M Bruzzi, J Adey, A Al-Ajili, P Alexandrov, G Alfieri, PP Allport, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
652005
How measurement protocols influence the dynamic JV characteristics of perovskite solar cells: Theory and experiment
GA Nemnes, C Besleaga, AG Tomulescu, A Palici, L Pintilie, A Manolescu, ...
Solar Energy 173, 976-983, 2018
642018
Polarization induced self-doping in epitaxial Pb(Zr0.20Ti0.80)O3 thin films
L Pintilie, C Ghica, CM Teodorescu, I Pintilie, C Chirila, I Pasuk, L Trupina, ...
Scientific Reports 5 (1), 14974, 2015
642015
Development of radiation tolerant semiconductor detectors for the Super-LHC
M Moll, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
642005
Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon
J Zhang, I Pintilie, E Fretwurst, R Klanner, H Perrey, J Schwandt
Journal of Synchrotron Radiation 19 (3), 340-346, 2012
622012
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