| Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting CH Yang, A Rossi, R Ruskov, NS Lai, FA Mohiyaddin, S Lee, C Tahan, ... Nature Communications 4, 2069, 2013 | 366 | 2013 |
| Gate-based single-shot readout of spins in silicon A West, B Hensen, A Jouan, T Tanttu, CH Yang, A Rossi, ... Nature nanotechnology 14 (5), 437-441, 2019 | 178 | 2019 |
| An accurate single-electron pump based on a highly tunable silicon quantum dot A Rossi, T Tanttu, KY Tan, I Iisakka, R Zhao, KW Chan, GC Tettamanzi, ... Nano Letters 14 (6), 3405-3411, 2014 | 92 | 2014 |
| Radio-frequency capacitive gate-based sensing I Ahmed, JA Haigh, S Schaal, S Barraud, Y Zhu, C Lee, M Amado, ... Physical Review Applied 10 (1), 014018, 2018 | 86 | 2018 |
| Valley splitting of single-electron Si MOS quantum dots JK Gamble, P Harvey-Collard, NT Jacobson, AD Baczewski, E Nielsen, ... Applied Physics Letters 109 (25), 2016 | 79 | 2016 |
| A CMOS dynamic random access architecture for radio-frequency readout of quantum devices S Schaal, A Rossi, VN Ciriano-Tejel, TY Yang, S Barraud, JJL Morton, ... Nature Electronics 2 (6), 236-242, 2019 | 75 | 2019 |
| Orbital and valley state spectra of a few-electron silicon quantum dot CH Yang, WH Lim, NS Lai, A Rossi, A Morello, AS Dzurak Physical Review B—Condensed Matter and Materials Physics 86 (11), 115319, 2012 | 69 | 2012 |
| Evidence for universality of tunable-barrier electron pumps SP Giblin, A Fujiwara, G Yamahata, MH Bae, N Kim, A Rossi, M Möttönen, ... Metrologia 56 (4), 044004, 2019 | 57 | 2019 |
| Thermal-error regime in high-accuracy gigahertz single-electron pumping R Zhao, A Rossi, SP Giblin, JD Fletcher, FE Hudson, M Möttönen, ... Physical Review Applied 8 (4), 044021, 2017 | 57 | 2017 |
| Charge state hysteresis in semiconductor quantum dots CH Yang, A Rossi, NS Lai, R Leon, WH Lim, AS Dzurak Applied Physics Letters 105 (18), 2014 | 43 | 2014 |
| Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor A Rossi, R Zhao, AS Dzurak, MF Gonzalez-Zalba Applied Physics Letters 110 (21), 2017 | 34 | 2017 |
| Electron temperature in electrically isolated Si double quantum dots A Rossi, T Ferrus, DA Williams Applied Physics Letters 100 (13), 2012 | 25 | 2012 |
| Silicon metal-oxide-semiconductor quantum dots for single-electron pumping A Rossi, T Tanttu, FE Hudson, Y Sun, M Möttönen, AS Dzurak JoVE (Journal of Visualized Experiments), e52852, 2015 | 24 | 2015 |
| Coulomb interaction and valley-orbit coupling in Si quantum dots L Jiang, CH Yang, Z Pan, A Rossi, AS Dzurak, D Culcer Physical Review B—Condensed Matter and Materials Physics 88 (8), 085311, 2013 | 22 | 2013 |
| Electron counting in a silicon single-electron pump T Tanttu, A Rossi, KY Tan, KE Huhtinen, KW Chan, M Möttönen, ... New Journal of Physics 17 (10), 103030, 2015 | 20 | 2015 |
| Detection of charge motion in a non-metallic silicon isolated double quantum dot T Ferrus, A Rossi, M Tanner, G Podd, P Chapman, DA Williams New Journal of Physics 13 (10), 103012, 2011 | 19 | 2011 |
| Three-waveform bidirectional pumping of single electrons with a silicon quantum dot T Tanttu, A Rossi, KY Tan, A Mäkinen, KW Chan, AS Dzurak, M Möttönen Scientific reports 6 (1), 36381, 2016 | 17 | 2016 |
| Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector M Jenei, E Potanina, R Zhao, KY Tan, A Rossi, T Tanttu, KW Chan, ... Physical Review Research 1 (3), 033163, 2019 | 16 | 2019 |
| Microwave-assisted transport via localized states in degenerately doped Si single electron transistors A Rossi, DG Hasko Journal of Applied Physics 108 (3), 2010 | 16 | 2010 |
| Charge detection in phosphorus-doped silicon double quantum dots A Rossi, T Ferrus, GJ Podd, DA Williams Applied Physics Letters 97 (22), 2010 | 15 | 2010 |
