| Surface activated bonding of silicon wafers at room temperature H Takagi, K Kikuchi, R Maeda, TR Chung, T Suga Applied physics letters 68 (16), 2222-2224, 1996 | 592 | 1996 |
| Interconnect structure for stacked semiconductor device T Suga US Patent 6,465,892, 2002 | 470 | 2002 |
| Method for manufacturing an interconnect structure for stacked semiconductor device T Suga US Patent 6,472,293, 2002 | 396 | 2002 |
| Room temperature Cu–Cu direct bonding using surface activated bonding method TH Kim, MMR Howlader, T Itoh, T Suga Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 21 (2 …, 2003 | 359 | 2003 |
| Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation method T Suga, Y Takahashi, H Takagi, B Gibbesch, G Elssner Acta metallurgica et materialia 40, S133-S137, 1992 | 300 | 1992 |
| Effect of surface roughness on room-temperature wafer bonding by Ar beam surface activation H Takagi, R Maeda, TR Chung, N Hosoda, T Suga Japanese journal of applied physics 37 (7R), 4197, 1998 | 214 | 1998 |
| Self-excited piezoelectric PZT microcantilevers for dynamic SFM—with inherent sensing and actuating capabilities C Lee, T Itoh, T Suga Sensors and Actuators A: Physical 72 (2), 179-188, 1999 | 203 | 1999 |
| Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-diamond devices Z Cheng, F Mu, L Yates, T Suga, S Graham ACS applied materials & interfaces 12 (7), 8376-8384, 2020 | 169 | 2020 |
| Development of a force sensor for atomic force microscopy using piezoelectric thin films T Itoh, T Suga Nanotechnology 4 (4), 218, 1993 | 168 | 1993 |
| Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method H Takagi, R Maeda, TR Chung, T Suga Sensors and Actuators A: Physical 70 (1-2), 164-170, 1998 | 163 | 1998 |
| Bumpless interconnect through ultrafine Cu electrodes by means of surface-activated bonding (SAB) method A Shigetou, T Itoh, M Matsuo, N Hayasaka, K Okumura, T Suga IEEE transactions on advanced packaging 29 (2), 218-226, 2006 | 160 | 2006 |
| Low-temperature bonding of laser diode chips on silicon substrates using plasma activation of Au films E Higurashi, T Imamura, T Suga, R Sawada IEEE Photonics Technology Letters 19 (24), 1994-1996, 2007 | 156 | 2007 |
| Feasibility of surface activated bonding for ultra-fine pitch interconnection-A new concept of bump-less direct bonding for system level packaging T Suga 2000 Proceedings. 50th Electronic Components and Technology Conference (Cat …, 2000 | 153 | 2000 |
| Semiconductor device and method for fabricating the device T Suga US Patent 7,078,811, 2006 | 145 | 2006 |
| Composite parameters and mechanical compatibility of material joints T Suga, G Elssner, S Schmauder Journal of Composite Materials 22 (10), 917-934, 1988 | 144 | 1988 |
| Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation H Takagi, R Maeda, N Hosoda, T Suga Applied physics letters 74 (16), 2387-2389, 1999 | 142 | 1999 |
| Au–Au surface-activated bonding and its application to optical microsensors with 3-D structure E Higurashi, D Chino, T Suga, R Sawada IEEE Journal of Selected Topics in Quantum Electronics 15 (5), 1500-1505, 2009 | 134 | 2009 |
| Micromachined piezoelectric force sensors based on PZT thin films C Lee, T Itoh, T Suga IEEE transactions on ultrasonics, ferroelectrics, and frequency control 43 …, 1996 | 128 | 1996 |
| Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices F Mu, R He, T Suga Scripta Materialia 150, 148-151, 2018 | 124 | 2018 |
| Transmission electron microscope observations of Si/Si interface bonded at room temperature by Ar beam surface activation H Takagi, R Maeda, T Suga Japanese journal of applied physics 38 (3R), 1589, 1999 | 120 | 1999 |
