| Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits ML Green, EP Gusev, R Degraeve, EL Garfunkel Journal of Applied Physics 90 (5), 2057-2121, 2001 | 1026 | 2001 |
| Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ... Applied physics letters 59 (7), 811-813, 1991 | 940 | 1991 |
| Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process ML Green, GD Wilk US Patent 6,797,525, 2004 | 434 | 2004 |
| Nucleation and growth of atomic layer deposited gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide or Si–O–N) underlayers ML Green, MY Ho, B Busch, GD Wilk, T Sorsch, T Conard, B Brijs, ... Journal of Applied Physics 92 (12), 7168-7174, 2002 | 381 | 2002 |
| The 2019 materials by design roadmap K Alberi, MB Nardelli, A Zakutayev, L Mitas, S Curtarolo, A Jain, M Fornari, ... Journal of Physics D: Applied Physics 52 (1), 013001, 2018 | 352 | 2018 |
| Chemical vapor deposition of ruthenium and ruthenium dioxide films ML Green, ME Gross, LE Papa, KJ Schnoes, D Brasen Journal of the Electrochemical Society 132 (11), 2677, 1985 | 325 | 1985 |
| Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies ML Green, CL Choi, JR Hattrick-Simpers, AM Joshi, I Takeuchi, SC Barron, ... Applied Physics Reviews 4 (1), 2017 | 324 | 2017 |
| Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials ML Green, I Takeuchi, JR Hattrick-Simpers Journal of Applied Physics 113 (23), 2013 | 301 | 2013 |
| Growth and characterization of ultrathin nitrided silicon oxide films EP Gusev, HC Lu, EL Garfunkel, T Gustafsson, ML Green IBM journal of research and development 43 (3), 265-286, 1999 | 280 | 1999 |
| Dielectric Films for Advanced Microelectronics M Baklanov, M Green, K Maex | 278 | 2007 |
| The vertical replacement-gate (VRG) MOSFET: A 50-nm vertical MOSFET with lithography-independent gate length JM Hergenrother, D Monroe, FP Klemens, A Komblit, GR Weber, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 261* | 1999 |
| Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices ML Ostraat, JW De Blauwe, ML Green, LD Bell, ML Brongersma, ... Applied Physics Letters 79 (3), 433-435, 2001 | 259 | 2001 |
| Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition MY Ho, H Gong, GD Wilk, BW Busch, ML Green, PM Voyles, DA Muller, ... Journal of Applied Physics 93 (3), 1477-1481, 2003 | 234 | 2003 |
| Semiconductor heterostructure devices with strained semiconductor layers D Brasen, EA Fitzgerald Jr, ML Green, DP Monroe, PJ Silverman, YH Xie US Patent 5,442,205, 1995 | 228 | 1995 |
| A model for the FCC→ HCP transformation, its applications, and experimental evidence S Mahajan, ML Green, D Brasen Metallurgical Transactions A 8 (2), 283-293, 1977 | 192 | 1977 |
| Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness ML Green, D Brasen, KW Evans‐Lutterodt, LC Feldman, K Krisch, ... Applied physics letters 65 (7), 848-850, 1994 | 190 | 1994 |
| Field effect devices and capacitors with improved thin film dielectrics and method for making same D Brasen, EL Garfunkel, ML Green, EP Gusev US Patent 5,861,651, 1999 | 187 | 1999 |
| Measurement, Standards, and Data Needs for CO2 Capture Materials: A Critical Review L Espinal, DL Poster, W Wong-Ng, AJ Allen, ML Green Environmental science & technology 47 (21), 11960-11975, 2013 | 176 | 2013 |
| Multi-component high-K gate dielectrics for the silicon industry L Manchanda, MD Morris, ML Green, RB Van Dover, F Klemens, ... Microelectronic Engineering 59 (1-4), 351-359, 2001 | 175 | 2001 |
| Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy JP Chang, ML Green, VM Donnelly, RL Opila, J Eng Jr, J Sapjeta, ... Journal of Applied Physics 87 (9), 4449-4455, 2000 | 173 | 2000 |
Leonard FeldmanProfessor of Physics and Materials ScienceVerified email at rutgers.edu
