| Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding P Sittimart, S Ohmagari, T Matsumae, H Umezawa, T Yoshitake AIP Advances 11 (10), 2021 | 28 | 2021 |
| Epitaxial growth of β-FeSi2 thin films on Si (111) substrates by radio frequency magnetron sputtering and their application to near-infrared photodetection N Promros, R Baba, M Takahara, TM Mostafa, P Sittimart, M Shaban, ... Japanese journal of applied physics 55 (6S2), 06HC03, 2016 | 18 | 2016 |
| Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates P Sittimart, S Ohmagari, T Yoshitake Japanese journal of applied physics 60 (SB), SBBD05, 2021 | 14 | 2021 |
| Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide … R Chaleawpong, N Promros, P Charoenyuenyao, N Borwornpornmetee, ... Thin Solid Films 709, 138229, 2020 | 13 | 2020 |
| Analysis of electrical characteristics of Pd/n-nanocarbon/p-Si heterojunction diodes: By CVf and G/wVf A Zkria, E Abubakr, P Sittimart, T Yoshitake Journal of Nanomaterials 2020, 1-9, 2020 | 10 | 2020 |
| Interface state density and series resistance of n-type nanocrystalline FeSi2/p-Type Si heterojunctions formed by utilizing facing-target direct-current sputtering P Sittimart, A Duangrawa, P Onsee, S Teakchaicum, A Nopparuchikun, ... Journal of Nanoscience and Nanotechnology 18 (3), 1841-1846, 2018 | 9 | 2018 |
| Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application SM Valappil, S Ohmagari, A Zkria, P Sittimart, E Abubakr, H Kato, ... AIP Advances 12 (8), 2022 | 8 | 2022 |
| Production of p‐Type Si/n‐Type β‐FeSi2 Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State … R Chaleawpong, N Promros, P Charoenyuenyao, A Nopparuchikun, ... physica status solidi (a) 215 (20), 1701022, 2018 | 8 | 2018 |
| Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates … P Sittimart, A Nopparuchikun, N Promros Advances in Materials Science and Engineering 2017, 2017 | 8 | 2017 |
| Characterization of n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions at low temperatures N Promros, R Baba, H Kishimoto, P Sittimart, T Hanada, K Hanada, ... Journal of Nanoelectronics and Optoelectronics 11 (5), 579-584, 2016 | 8 | 2016 |
| Investigation of electrical transport properties in heterojunctions comprised of silicon substrate and nanocrystalline iron disilicide films N Promros, P Sittimart, W Kaenrai International Journal of Nanotechnology 13 (10-12), 903-912, 2016 | 8 | 2016 |
| Thermally Stable and Radiation‐Proof Visible‐Light Photodetectors Made from N‐Doped Diamond P Sittimart, S Ohmagari, H Umezawa, H Kato, K Ishiji, T Yoshitake Advanced Optical Materials 11 (12), 2203006, 2023 | 6 | 2023 |
| Physical Properties of Fe3Si Films Coated through Facing Targets Sputtering after Microwave Plasma Treatment N Borwornpornmetee, P Charoenyuenyao, R Chaleawpong, ... Coatings 11 (8), 923, 2021 | 6 | 2021 |
| Photovoltaic properties and series resistance of p-type Si/intrinsic Si/n-type nanocrystalline FeSi2 heterojunctions created by utilizing facing-targets direct-current sputtering W Kaenrai, N Promros, P Sittimart, R Chaleawpong, P Charoenyuenyao, ... Journal of Nanoscience and Nanotechnology 19 (3), 1445-1450, 2019 | 6 | 2019 |
| Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition A Nopparuchikun, N Promros, P Sittimart, P Onsee, A Duangrawa, ... Advances in Natural Sciences: Nanoscience and Nanotechnology 8 (3), 035016, 2017 | 5 | 2017 |
| Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing … P Charoenyuenyao, R Chaleawpong, N Borwornpornmetee, ... Materials Science in Semiconductor Processing 146, 106604, 2022 | 4 | 2022 |
| The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors CY Tsay, YC Chen, HM Tsai, P Sittimart, T Yoshitake Materials 15 (22), 8145, 2022 | 3 | 2022 |
| Reverse bias dependent impedance and dielectric properties of Al/n-NC FeSi2/p-Si/Pd heterostructures formed by facing-targets sputtering N Borwornpornmetee, R Chaleawpong, P Charoenyuenyao, ... Materials Science in Semiconductor Processing 146, 106641, 2022 | 3 | 2022 |
| Carrier transportation properties and series resistance of n-type β-FeSi2/p-type Si heterojunctions fabricated by RF magnetron sputtering A Nopparuchikun, N Promros, S Teakchaicum, P Onsee, A Duangrawa, ... Japanese Journal of Applied Physics 56 (6S2), 06HE06, 2017 | 3 | 2017 |
| Physical properties of copper films deposited by compact-size magnetron sputtering source with changing magnetic field strength N Promros, P Sittimart, N Patanoo, S Kongnithichalerm, M Horprathum, ... Key Engineering Materials 675, 193-196, 2016 | 3 | 2016 |
