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Ming-Wei Lin
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Atomic Defects in Monolayer Titanium Carbide (Ti3C2Tx) MXene
X Sang, Y Xie, MW Lin, M Alhabeb, KL Van Aken, Y Gogotsi, PRC Kent, ...
ACS nano 10 (10), 9193-9200, 2016
10072016
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ...
ACS nano 7 (5), 4449-4458, 2013
4062013
Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy
K Wang, B Huang, M Tian, F Ceballos, MW Lin, M Mahjouri-Samani, ...
ACS nano 10 (7), 6612-6622, 2016
3122016
Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse
X Li, MW Lin, AA Puretzky, JC Idrobo, C Ma, M Chi, M Yoon, CM Rouleau, ...
Scientific reports 4 (1), 5497, 2014
3042014
Ultrathin nanosheets of CrSiTe 3: a semiconducting two-dimensional ferromagnetic material
MW Lin, HL Zhuang, J Yan, TZ Ward, AA Puretzky, CM Rouleau, Z Gai, ...
Journal of Materials Chemistry C 4 (2), 315-322, 2016
2932016
Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy
X Li, MW Lin, J Lin, B Huang, AA Puretzky, C Ma, K Wang, W Zhou, ...
Science Advances 2 (4), e1501882, 2016
2922016
Strong spin-lattice coupling in CrSiTe3
LD Casto, AJ Clune, MO Yokosuk, JL Musfeldt, TJ Williams, HL Zhuang, ...
APL materials 3 (4), 2015
2642015
Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
M Mahjouri-Samani, MW Lin, K Wang, AR Lupini, J Lee, L Basile, ...
Nature communications 6 (1), 7749, 2015
2562015
Method to improve planarity of electroplated copper
SW Chou, MH Tsai, MW Lin
US Patent 7,064,068, 2006
2032006
Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte
MW Lin, L Liu, Q Lan, X Tan, KS Dhindsa, P Zeng, VM Naik, MMC Cheng, ...
Journal of Physics D: Applied Physics 45 (34), 345102, 2012
1902012
Thickness-dependent charge transport in few-layer MoS2 field-effect transistors
MW Lin, II Kravchenko, J Fowlkes, X Li, AA Puretzky, CM Rouleau, ...
Nanotechnology 27 (16), 165203, 2016
1872016
Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2−x Crystals
M Mahjouri-Samani, L Liang, A Oyedele, YS Kim, M Tian, N Cross, ...
Nano letters 16 (8), 5213-5220, 2016
1592016
Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene
X Li, L Basile, B Huang, C Ma, J Lee, IV Vlassiouk, AA Puretzky, MW Lin, ...
ACS nano 9 (8), 8078-8088, 2015
1432015
Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams
V Iberi, L Liang, AV Ievlev, MG Stanford, MW Lin, X Li, M Mahjouri-Samani, ...
Scientific reports 6 (1), 30481, 2016
1242016
Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors
MW Lin, C Ling, Y Zhang, HJ Yoon, MMC Cheng, LA Agapito, N Kioussis, ...
Nanotechnology 22 (26), 265201, 2011
1182011
Beaming light from a subwavelength metal slit surrounded by dielectric surface gratings
DZ Lin, CK Chang, YC Chen, DL Yang, MW Lin, JT Yeh, JM Liu, CH Kuan, ...
Optics Express 14 (8), 3503-3511, 2006
1062006
Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation
X Li, MW Lin, L Basile, SM Hus, AA Puretzky, J Lee, YC Kuo, LY Chang, ...
Advanced Materials 28 (37), 8240-8247, 2016
1052016
Full electroresistance modulation in a mixed-phase metallic alloy
ZQ Liu, L Li, Z Gai, JD Clarkson, SL Hsu, AT Wong, LS Fan, MW Lin, ...
Physical review letters 116 (9), 097203, 2016
1042016
Edge effects on the pH response of graphene nanoribbon field effect transistors
X Tan, HJ Chuang, MW Lin, Z Zhou, MMC Cheng
The Journal of Physical Chemistry C 117 (51), 27155-27160, 2013
652013
Electrically reversible cracks in an intermetallic film controlled by an electric field
ZQ Liu, JH Liu, MD Biegalski, JM Hu, SL Shang, Y Ji, JM Wang, SL Hsu, ...
Nature communications 9 (1), 41, 2018
622018
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