Anders Olsson
Anders Olsson
Pearl Laboratories
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Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers
GP Agrawal, NA Olsson
IEEE Journal of quantum electronics 25 (11), 2297-2306, 1989
Lightwave systems with optical amplifiers
NA Olsson
Journal of Lightwave Technology 7 (7), 1071-1082, 1989
High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers
WT Tsang, NA Olsson, RA Logan
Applied Physics Letters 42 (8), 650-652, 1983
Integrated four-channel Mach-Zehnder muiti/demultiplexer fabricated with phosphorous doped SiO~ 2 waveguides on Si
BH Verbeek, CH Henry, NA Olsson, KJ Orlowsky, RF Kazarinov, ...
SPIE MILESTONE SERIES MS 125, 263-267, 1996
Surface-emitting microlasers for photonic switching and interchip connections
JL Jewell, YH Lee, A Scherer, SL McCall, NA Olsson, JP Harbison, ...
Optical Engineering 29 (3), 210-214, 1990
Locking range and stability of injection locked 1.54 µm InGaAsP semiconductor lasers
C Henry, N Olsson, N Dutta
IEEE Journal of Quantum Electronics 21 (8), 1152-1156, 1985
16 Gbit/s all-optical demultiplexing using four-wave mixing
PA Andrekson, NA Olsson, JR Simpson, T Tanbun-Ek, RA Logan, ...
Electronics Letters 27 (11), 922-924, 1991
Reflection noise in index-guided InGaAsP lasers
H Temkin, N Olsson, J Abeles, R Logan, M Panish
IEEE journal of quantum electronics 22 (2), 286-293, 1986
Ge0. 6Si0. 4 rib waveguide avalanche photodetectors for 1.3 μm operation
H Temkin, A Antreasyan, NA Olsson, TP Pearsall, JC Bean
Applied physics letters 49 (13), 809-811, 1986
Fundamentals and Technology
PC Becker, NA Olsson, JR Simpson, EDF Amplifiers
Lucent Technologies, USA, 1999
68.3 km transmission with 1.37 Tbit km/s capacity using wavelength division multiplexing of ten single-frequency lasers at 1.5 μm
NA Olsson, J Hegarty, RA Logan, LF Johnson, KL Walker, LG Cohen, ...
Electronics Letters 21 (3), 105-106, 1985
Amplification and compression of weak picosecond optical pulses by using semiconductor-laser amplifiers
GP Agrawal, NA Olsson
Optics letters 14 (10), 500-502, 1989
Room‐temperature continuous‐wave vertical‐cavity surface‐emitting GaAs injection lasers
K Tai, RJ Fischer, CW Seabury, NA Olsson, TCD Huo, Y Ota, AY Cho
Applied physics letters 55 (24), 2473-2475, 1989
Characteristics of a semiconductor laser pumped Brillouin amplifier with electronically controlled bandwidth
N Olsson, J Van Der Ziel
Journal of Lightwave Technology 5 (1), 147-153, 1987
Coherent lightwave transmission over 150 km fibre lengths at 400 Mbit/s and 1 Gbit/s data rates using phase modulation
RA Linke, BL Kasper, NA Olsson, RC Alferness
Electronics Letters 22 (1), 30-31, 1986
Chirp-free transmission over 82.5 km of single mode fibers at 2 Gbit/s with injection locked DFB semiconductor lasers
N Olsson, H Temkin, R Logan, L Johnson, G Dolan, J van der Ziel, ...
Journal of Lightwave Technology 3 (1), 63-67, 1985
Measurement of very low‐loss silica on silicon waveguides with a ring resonator
R Adar, Y Shani, CH Henry, RC Kistler, GE Blonder, NA Olsson
Applied physics letters 58 (5), 444-445, 1991
Pseudo‐quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes
F Capasso, HM Cox, AL Hutchinson, NA Olsson, SG Hummel
Applied physics letters 45 (11), 1193-1195, 1984
A 970 nm strained‐layer InGaAs/GaAlAs quantum well laser for pumping an erbium‐doped optical fiber amplifier
MC Wu, NA Olsson, D Sivco, AY Cho
Applied physics letters 56 (3), 221-223, 1990
Cancellation of fiber loss by semiconductor laser pumped Brillouin amplification at 1.5 μm
NA Olsson, JP Van der Ziel
Applied physics letters 48 (20), 1329-1330, 1986
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