Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers GP Agrawal, NA Olsson IEEE Journal of quantum electronics 25 (11), 2297-2306, 1989 | 1581 | 1989 |
Lightwave systems with optical amplifiers NA Olsson Journal of Lightwave Technology 7 (7), 1071-1082, 1989 | 1095 | 1989 |
High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers WT Tsang, NA Olsson, RA Logan Applied Physics Letters 42 (8), 650-652, 1983 | 330 | 1983 |
Integrated four-channel Mach-Zehnder muiti/demultiplexer fabricated with phosphorous doped SiO~ 2 waveguides on Si BH Verbeek, CH Henry, NA Olsson, KJ Orlowsky, RF Kazarinov, ... SPIE MILESTONE SERIES MS 125, 263-267, 1996 | 224* | 1996 |
Surface-emitting microlasers for photonic switching and interchip connections JL Jewell, YH Lee, A Scherer, SL McCall, NA Olsson, JP Harbison, ... Optical Engineering 29 (3), 210-214, 1990 | 220 | 1990 |
Locking range and stability of injection locked 1.54 µm InGaAsP semiconductor lasers C Henry, N Olsson, N Dutta IEEE Journal of Quantum Electronics 21 (8), 1152-1156, 1985 | 205 | 1985 |
16 Gbit/s all-optical demultiplexing using four-wave mixing PA Andrekson, NA Olsson, JR Simpson, T Tanbun-Ek, RA Logan, ... Electronics Letters 27 (11), 922-924, 1991 | 178 | 1991 |
Reflection noise in index-guided InGaAsP lasers H Temkin, N Olsson, J Abeles, R Logan, M Panish IEEE journal of quantum electronics 22 (2), 286-293, 1986 | 134 | 1986 |
Ge0. 6Si0. 4 rib waveguide avalanche photodetectors for 1.3 μm operation H Temkin, A Antreasyan, NA Olsson, TP Pearsall, JC Bean Applied physics letters 49 (13), 809-811, 1986 | 115 | 1986 |
Fundamentals and Technology PC Becker, NA Olsson, JR Simpson, EDF Amplifiers Lucent Technologies, USA, 1999 | 114 | 1999 |
68.3 km transmission with 1.37 Tbit km/s capacity using wavelength division multiplexing of ten single-frequency lasers at 1.5 μm NA Olsson, J Hegarty, RA Logan, LF Johnson, KL Walker, LG Cohen, ... Electronics Letters 21 (3), 105-106, 1985 | 113 | 1985 |
Amplification and compression of weak picosecond optical pulses by using semiconductor-laser amplifiers GP Agrawal, NA Olsson Optics letters 14 (10), 500-502, 1989 | 109 | 1989 |
Room‐temperature continuous‐wave vertical‐cavity surface‐emitting GaAs injection lasers K Tai, RJ Fischer, CW Seabury, NA Olsson, TCD Huo, Y Ota, AY Cho Applied physics letters 55 (24), 2473-2475, 1989 | 106 | 1989 |
Characteristics of a semiconductor laser pumped Brillouin amplifier with electronically controlled bandwidth N Olsson, J Van Der Ziel Journal of Lightwave Technology 5 (1), 147-153, 1987 | 100 | 1987 |
Chirp-free transmission over 82.5 km of single mode fibers at 2 Gbit/s with injection locked DFB semiconductor lasers N Olsson, H Temkin, R Logan, L Johnson, G Dolan, J van der Ziel, ... Journal of Lightwave Technology 3 (1), 63-67, 1985 | 99 | 1985 |
Coherent lightwave transmission over 150 km fibre lengths at 400 Mbit/s and 1 Gbit/s data rates using phase modulation RA Linke, BL Kasper, NA Olsson, RC Alferness Electronics Letters 22 (1), 30-31, 1986 | 98 | 1986 |
Measurement of very low‐loss silica on silicon waveguides with a ring resonator R Adar, Y Shani, CH Henry, RC Kistler, GE Blonder, NA Olsson Applied physics letters 58 (5), 444-445, 1991 | 95 | 1991 |
Pseudo‐quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes F Capasso, HM Cox, AL Hutchinson, NA Olsson, SG Hummel Applied physics letters 45 (11), 1193-1195, 1984 | 93 | 1984 |
Cancellation of fiber loss by semiconductor laser pumped Brillouin amplification at 1.5 μm NA Olsson, JP Van der Ziel Applied physics letters 48 (20), 1329-1330, 1986 | 92 | 1986 |
A 970 nm strained‐layer InGaAs/GaAlAs quantum well laser for pumping an erbium‐doped optical fiber amplifier MC Wu, NA Olsson, D Sivco, AY Cho Applied physics letters 56 (3), 221-223, 1990 | 91 | 1990 |