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Taylor J. Z. Stock
Taylor J. Z. Stock
Department of Electronic & Electrical Engineering, University College London
Verified email at ucl.ac.uk
Title
Cited by
Cited by
Year
Nondestructive imaging of atomically thin nanostructures buried in silicon
G Gramse, A Kölker, T Lim, TJZ Stock, H Solanki, SR Schofield, ...
Science advances 3 (6), e1602586, 2017
772017
Atomic-scale patterning of arsenic in silicon by scanning tunneling microscopy
TJZ Stock, O Warschkow, PC Constantinou, J Li, S Fearn, E Crane, ...
ACS nano 14 (3), 3316-3327, 2020
582020
Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p–n junctions
G Gramse, A Kölker, T Škereň, TJZ Stock, G Aeppli, F Kienberger, ...
Nature Electronics 3 (9), 531-538, 2020
382020
Copper phthalocyanine thin films on Cu (111): Sub-monolayer to multi-layer
TJZ Stock, J Nogami
Surface Science 637, 132-139, 2015
182015
Tunneling electron induced chemisorption of copper phthalocyanine molecules on the Cu (111) surface
T Stock, J Nogami
Applied Physics Letters 104 (7), 2014
172014
Resistless EUV lithography: Photon-induced oxide patterning on silicon
LT Tseng, P Karadan, D Kazazis, PC Constantinou, TJZ Stock, NJ Curson, ...
Science Advances 9 (16), eadf5997, 2023
112023
High-energy photoemission final states beyond the free-electron approximation
VN Strocov, LL Lev, F Alarab, P Constantinou, X Wang, T Schmitt, ...
Nature Communications 14 (1), 4827, 2023
102023
EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning
P Constantinou, TJZ Stock, LT Tseng, D Kazazis, M Muntwiler, CAF Vaz, ...
Nature Communications 15 (1), 694, 2024
92024
Hydrogen resist lithography and electron beam lithography for fabricating silicon targets for studying donor orbital states
E Crane, A Köolker, TZ Stock, N Stavrias, K Saeedi, MAW Van Loon, ...
Journal of Physics: Conference Series 1079 (1), 012010, 2018
92018
CuPc:C60 nanocomposite: A pathway to control organic microstructure and phase transformation
TJZ Stock, T Ogundimu, JM Baribeau, ZH Lu, J Nogami
physica status solidi (b) 252 (3), 545-552, 2015
62015
Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon
N D'Anna, D Ferreira Sanchez, G Matmon, J Bragg, PC Constantinou, ...
Advanced Electronic Materials 9 (5), 2201212, 2023
52023
Spatially Resolved Dielectric Loss at the Interface
M Cowie, TJZ Stock, PC Constantinou, NJ Curson, P Grütter
Physical Review Letters 132 (25), 256202, 2024
42024
Benchmarking of X‐Ray Fluorescence Microscopy with Ion Beam Implanted Samples Showing Detection Sensitivity of Hundreds of Atoms
MG Masteghin, T Gervais, SK Clowes, DC Cox, V Zelyk, A Pattammattel, ...
Small Methods, 2301610, 2024
32024
Momentum‐Space Imaging of Ultra‐Thin Electron Liquids in δ‐Doped Silicon
P Constantinou, TJZ Stock, E Crane, A Kölker, M van Loon, J Li, S Fearn, ...
Advanced Science 10 (27), 2302101, 2023
32023
Bismuth trichloride as a molecular precursor for silicon doping
EAS Lundgren, R Conybeare, TJZ Stock, NJ Curson, O Warschkow, ...
Applied Physics Letters 122 (15), 2023
32023
Room temperature incorporation of arsenic atoms into the germanium (001) surface
EVS Hofmann, TJZ Stock, O Warschkow, R Conybeare, NJ Curson, ...
Angewandte Chemie 135 (7), e202213982, 2023
32023
Are high-energy photoemission final states free-electron-like?
VN Strocov, LL Lev, F Alarab, P Constantinou, T Schmitt, TJZ Stock, ...
arXiv preprint arXiv:2301.00033, 2022
32022
The formation of a Sn monolayer on Ge (1 0 0) studied at the atomic scale
EVS Hofmann, E Scalise, F Montalenti, TJZ Stock, SR Schofield, ...
Applied Surface Science 561, 149961, 2021
32021
Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication
TJZ Stock, O Warschkow, PC Constantinou, DR Bowler, SR Schofield, ...
Advanced Materials, 2312282, 2024
22024
Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001)
EAS Lundgren, C Byron, P Constantinou, TJZ Stock, NJ Curson, ...
The Journal of Physical Chemistry C 127 (33), 16433-16441, 2023
22023
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Articles 1–20