| Size- and Shape-Controlled Synthesis and Properties of Magnetic-Plasmonic Core-Shell Nanoparticles E Kwizera, E Chaffin, X Shen, J Chen, Q Zou, Z Wu, Z Gai, S Bhana, ... Journal of Physical Chemistry C, 2016 | 120 | 2016 |
| Nanostructured cobalt oxide and cobalt sulfide for flexible, high performance and durable supercapacitors S Aloqayli, CK Ranaweera, Z Wang, K Siam, PK Kahol, P Tripathi, ... Energy Storage Materials 8, 68-76, 2017 | 112 | 2017 |
| Photocatalytic water oxidation at the GaN (101̅0)− water interface X Shen, YA Small, J Wang, PB Allen, MV Fernandez-Serra, MS Hybertsen, ... The Journal of Physical Chemistry C 114 (32), 13695-13704, 2010 | 107 | 2010 |
| Wire versus tube: stability of small one-dimensional ZnO nanostructures X Shen, PB Allen, JT Muckerman, JW Davenport, JC Zheng Nano Letters 7 (8), 2267-2271, 2007 | 98 | 2007 |
| Identification of a major cause of endemically poor mobilities in SiC/SiO2 structures X Shen, ST Pantelides Applied Physics Letters 98 (5), 053507-053507-3, 2011 | 95 | 2011 |
| Phosphorous passivation of the SiO2/4H–SiC interface YK Sharma, AC Ahyi, T Issacs-Smith, X Shen, ST Pantelides, X Zhu, ... Solid-State Electronics 68, 103-107, 2012 | 85 | 2012 |
| Water adsorption on the GaN (101̅0) nonpolar surface X Shen, PB Allen, MS Hybertsen, JT Muckerman Journal of Physical Chemistry C 113 (9), 3365-3368, 2009 | 70 | 2009 |
| Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ... Applied Physics Letters 99 (20), 203501, 2011 | 66 | 2011 |
| Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ... IEEE Transactions on Device and Materials Reliability, 2018 | 63 | 2018 |
| Defect Luminescence from Wurtzite CuInS2 Nanocrystals: Combined Experimental and Theoretical Analysis A Leach, X Shen, A Faust, M Cleveland, A La Croix, U Banin, ... Journal of Physical Chemistry C 120, 5207, 2016 | 58 | 2016 |
| Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN high electron mobility transistors R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ... IEEE Transactions on Nuclear Science 64, 218, 2016 | 57 | 2016 |
| Unified band-theoretic description of structural, electronic, and magnetic properties of vanadium dioxide phases S Xu, X Shen, KA Hallman, RF Haglund Jr., ST Pantelides Physical Review B 95, 125105, 2017 | 56 | 2017 |
| Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices CX Zhang, EX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, SH Ryu, ... IEEE Transactions on Nuclear Science 58 (6), 2925-2929, 2011 | 52 | 2011 |
| Origins of low-frequency noise and interface traps in 4H-SiC MOSFETs CX Zhang, EX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, SH Ryu, ... IEEE Electron Device Letters 34 (1), 117-119, 2012 | 51 | 2012 |
| Phonon quasiparticles and anharmonic perturbation theory tested by molecular dynamics on a model system T Sun, X Shen, PB Allen Physical Review B 82 (22), 224304, 2010 | 50 | 2010 |
| Excess carbon in silicon carbide X Shen, MP Oxley, Y Puzyrev, BR Tuttle, G Duscher, ST Pantelides Journal of Applied Physics 108 (12), 123705, 2010 | 47 | 2010 |
| Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures X Shen, EX Zhang, CX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, ... Applied Physics Letters 98 (6), 063507, 2011 | 46 | 2011 |
| Bias-temperature instabilities in 4H-SiC metal–oxide–semiconductor capacitors EX Zhang, CX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, SH Ryu, ... IEEE Transactions on Device and Materials Reliability 12 (2), 391-398, 2012 | 44 | 2012 |
| Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs CX Zhang, X Shen, EX Zhang, DM Fleetwood, RD Schrimpf, SA Francis, ... IEEE Transactions on Electron Devices 60 (7), 2361-2367, 2013 | 42 | 2013 |
| Interlaced crystals having a perfect Bravais lattice and complex chemical order revealed by real-space crystallography X Shen, EA Hernández-Pagan, W Zhou, YS Puzyrev, JC Idrobo, ... Nature communications 5, 5431, 2014 | 40 | 2014 |
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityVerified email at vanderbilt.edu
