| P-type doping of GaN by magnesium ion implantation A Zkria, Y Katamune, T Yoshitake, S Ohmagari, T Hanada Applied Physics Express 10, 016501, 2017 | 101 | 2017 |
| Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition S Al-Riyami, S Ohmagari, T Yoshitake Applied Physics Express 3 (11), 115102, 2010 | 65 | 2010 |
| Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations S Ohmagari, H Yamada, N Tsubouchi, H Umezawa, A Chayahara, ... Applied Physics Letters 113 (3), 2018 | 54 | 2018 |
| Near-edge x-ray absorption fine-structure, x-ray photoemission, and Fourier transform infrared spectroscopies of ultrananocrystalline diamond/hydrogenated amorphous carbon … T Yoshitake, A Nagano, S Ohmagari, M Itakura, N Kuwano, R Ohtani, ... Japanese journal of applied physics 48 (2R), 020222, 2009 | 54 | 2009 |
| Non-destructive detection of killer defects of diamond Schottky barrier diodes S Ohmagari, T Teraji, Y Koide Journal of Applied Physics 110 (5), 2011 | 46 | 2011 |
| X-ray photoemission spectroscopy of nitrogen-doped UNCD/aC: H films prepared by pulsed laser deposition S Al-Riyami, S Ohmagari, T Yoshitake Diamond and related materials 19 (5-6), 510-513, 2010 | 44 | 2010 |
| Formation of p-type semiconducting ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by boron doping S Ohmagari, T Yoshitake, A Nagano, R Ohtani, H Setoyama, E Kobayashi, ... Japanese journal of applied physics 49 (3R), 031302, 2010 | 44 | 2010 |
| Near-edge X-ray absorption fine structure of ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by pulsed laser deposition S Ohmagari, T Yoshitake, A Nagano, S Al-Riyami, R Ohtani, H Setoyama, ... Journal of Nanomaterials 2009, 2009 | 42 | 2009 |
| Toward high‐performance diamond electronics: Control and annihilation of dislocation propagation by metal‐assisted termination S Ohmagari, H Yamada, N Tsubouchi, H Umezawa, A Chayahara, ... physica status solidi (a) 216 (21), 1900498, 2019 | 41 | 2019 |
| Low resistivity p+ diamond (100) films fabricated by hot-filament chemical vapor deposition S Ohmagari, K Srimongkon, H Yamada, H Umezawa, N Tsubouchi, ... Diamond and Related Materials 58, 110-114, 2015 | 37 | 2015 |
| Deep-ultraviolet light detection of p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films S Ohmagari, T Yoshitake Applied Physics Express 5 (6), 065202, 2012 | 36 | 2012 |
| Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries S Ohmagari, H Yamada, N Tsubouchi, H Umezawa, A Chayahara, A Seki, ... Applied Physics Letters 114 (8), 2019 | 33 | 2019 |
| Characterization of free-standing single-crystal diamond prepared by hot-filament chemical vapor deposition S Ohmagari, H Yamada, H Umezawa, A Chayahara, T Teraji, S Shikata Diamond and related materials 48, 19-23, 2014 | 32 | 2014 |
| Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding P Sittimart, S Ohmagari, T Matsumae, H Umezawa, T Yoshitake AIP Advances 11 (10), 2021 | 28 | 2021 |
| Growth and characterization of freestanding p+ diamond (100) substrates prepared by hot-filament chemical vapor deposition S Ohmagari, H Yamada, H Umezawa, N Tsubouchi, A Chayahara, ... Diamond and Related Materials 81, 33-37, 2018 | 26 | 2018 |
| P-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition and their application to photodetectors S Ohmagari, T Yoshitake Japanese journal of applied physics 51 (9R), 090123, 2012 | 26 | 2012 |
| Boron inhomogeneity of HPHT-grown single-crystal diamond substrates: Confocal micro-Raman mapping investigations K Srimongkon, S Ohmagari, Y Kato, V Amornkitbamrung, S Shikata Diamond and Related Materials 63, 21-25, 2016 | 25 | 2016 |
| X-ray photoemission spectroscopic study of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition S Ohmagari, T Yoshitake, A Nagano, R Ohtani, H Setoyama, E Kobayashi, ... Diamond and related materials 19 (7-9), 911-913, 2010 | 25 | 2010 |
| Heterojunction diodes comprising p-type ultrananocrystalline diamond films prepared by coaxial arc plasma deposition and n-type silicon substrates Y Katamune, S Ohmagari, S Al-Riyami, S Takagi, M Shaban, T Yoshitake Japanese journal of applied physics 52 (6R), 065801, 2013 | 23 | 2013 |
| Ohmic contact formation to heavily boron-doped p+ diamond prepared by hot-filament chemical vapor deposition S Ohmagari, T Matsumoto, H Umezawa, Y Mokuno MRS Advances 1 (51), 3489-3495, 2016 | 22 | 2016 |
Hitoshi UmezawaNational Institute of Advanced Industrial Science and Technology, Institut Néel/CNRSVerified email at aist.go.jp
